12
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
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AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
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AN1955: Thermal Measurement Methodology of RF Power Amplifiers
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AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
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Electromigration MTTF Calculator
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RF High Power Model
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.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2010
?
Initial Release of Data Sheet
1
Oct. 2010
?
Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2.
2
Feb. 2014
?
Changed operating frequency from 728–768 MHz to 618–803 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
?
Typical Single--Carrier W--CDMA Performance table: added footnote 1, “This part is not recommended for
Doherty applications across the 600 to 728 MHz band,” p. 1
?
Table 3, ESD Protection Characteristics: removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
?
Fig. 10, Pulsed CW Output Power versus Input Power @ 28 V: updated to reflect additional test data;
added footnote 1, “Output power capability drops rapidly below 658 MHz,” p. 8
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